1997. 4. 2 1/2 semiconductor technical data KTD1937 epitaxial planar npn transistor revision no : 2 high current switching application. lamp solenoid driver. features high h fe : 500 1500(i c =1a). low saturation :v ce(sat) =0.35v(max.) (i c =5a). maximum rating (ta=25 1 ) dim millimeters 1. base 2. collector 3. emitter to-220is 10.30 max 15.30 max 2.70 y 0.30 0.85 max x 3.20 y 0.20 3.00 y 0.30 a b c d e f g 12.30 max 0.75 max h 13.60 y 0.50 3.90 max 1.20 1.30 2.54 4.50 y 0.20 6.80 2.60 y 0.20 10 ? j k l m n o p q r f o q 1 2 3 l p n b g j m d n t t h e r t v s k l u t s 0.5 5 ^ 25 ^ 2.60 y 0.15 v u d a c electrical characteristics (ta=25 1 ) characteristic symbol rating unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 80 v emitter-base voltage v eb0 7 v collector current dc i c 10 a pulse i cp 15 base current i b 2 a collector power dissipation ta=25 1 p c 2 w tc=25 1 40 junction temperature t j 150 1 storage temperature range t stg -55 150 1 base collecto r emitter characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =80v, i e =0 - - 10 a emitter cut-off current i ebo v eb =7v, i c =0 - - 10 a collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 80 - - v dc current gain h fe (1) v ce =1v, i c =1a 500 - 1500 h fe (2) v ce =1v, i c =5a 150 - - collector-emitter saturation voltage v ce(sat) i c =5a, i b =0.05a - - 0.35 v base-emitter saturation voltage v be(sat) i c =5a, i b =0.05a - - 1.2 v collector-emitter forward voltage v ecf i e =5a, i b =0 - - 2.7 v transition frequency f t v ce =5v, i c =1a - 70 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 160 - pf switching time turn-on time t on i b1 6? b1 i 0 cc v =30v i b2 i b2 20 sec i =-i =0.05a b1 b2 output duty cycle < 1% input - 0.6 - s storage time t stg - 6.0 - fall time t f - 1.0 - equivalent circuit
1997. 4. 2 2/2 KTD1937 collector current i (a) 0 c 0 collector-emitter voltage v (v) ce ce c i - v h - i c collector current i (a) 0.1 0.3 10 30 fe dc current gain h transient thermal resistance th 0.1 1 0.1 0.01 0.001 pulse width t (s) w r - t safe operating area ce collector-emitter voltage v (v) 1 3 10 30 c collector current i (a) collector-emitter saturation ce(sat) 30 10 0.3 0.1 collector current i (a) c v - i v - i ce c c collector current i (a) 0 ce 0 collector-emitter voltage v (v) 4 8 12 16 4 8 12 16 common tc=25 c emitter 80 60 50 40 30 20 15 10 6 4 0 i =2ma b 2 4 6 8 10 12 14 16 0.2 0.4 0.6 0.8 1.0 1.2 common emitter tc=25 c i =5ma b 10 20 40 60 80 100 150 200 300 fe c 3 15 30 50 100 300 500 1k 3k common emitter v =1v ce tc=100 c tc=25 c tc=-25 c ce(sat) c voltage v (v) 3 1 0.01 0.03 0.05 0.1 0.3 0.5 1 3 common emitter i /i =100 c b tc = 10 0 c tc=25 c tc=-25 c th w r ( c/w) curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) no heat sink (2) infinite heat sink (tc=25 c) 10 100 1 10 100 1k (1) (2) 100 300 0.02 0.05 0.1 0.3 0.5 1 3 5 10 30 single nonrepetive pulse tc=25 c curves must be derated linearly with increase in temperature * i max.(pulsed) c c i max. (continuous) * 1 0 0 s * * 1ms 10m s * * 100ms dc op erat ion tc = 25 c v max. ceo revision no : 2
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